K-shell X-ray production in Silicon (Z₂ = 14) by (1 ⩽ Z₁ ⩽ 53) slow ions

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• 作者：Yu Lei^a ; Yongtao Zhao^a ; ^b ; ^{zhaoyt@impcas.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Xianming Zhou^a ; Rui Cheng^a ; Xing Wang^b ; Yuanbo Sun^a ; ^c ; Shidong Liu^c ; Jieru Ren^c ; Yuyu Wang^a ; Xiaoan Zhang^d ; Yaozong Li^d ; Changhui Liang^d ; Guoqing Xiao^a
• 关键词：X-ray production cross section ; Quasi-molecular model ; Direct ionization ; Near Bohr velocity
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：1 March 2016
• 年：2016
• 卷：370
• 期：Complete
• 页码：10-13
• 全文大小：470 K

文摘

K-shell X-ray emission of Silicon induced by near-Bohr-velocity ions was systematically investigated in collision systems for which the ratio of projectile-to-target atomic numbers (Z₁/Z₂) ranged from 0.07 to 3.79. The results show that, in asymmetric collisions, the measured K-shell X-ray production cross sections of Silicon fit very well with the predictions of different direct ionization models depending on the atomic number of projectile. In the case of near-symmetric collisions (Z₁/Z₂ ∼ 1), an obvious enhancement of the X-ray production cross section was observed, which can be attributed to the vacancy transfer within the framework of quasi-molecular model.