Extraction method for parasitic capacitances and inductances of HEMT models

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• 作者：HengShuang Zhang ; PeiJun Ma ; ^{pjma@xidian.edu.cn} ; Yang Lu ; BoChao Zhao ; JiaXin Zheng ; XiaoHua Ma ; Yue Hao
• 关键词：HEMT ; Small-signal model ; Parasitic capacitances and inductances ; Extraction method
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：108-113
• 全文大小：826 K
• 卷排序：129

文摘

A new extraction method for extrinsic parameters of HEMT model is proposed. The capacitances and inductances can be obtained simultaneously. The proposed method is compared with the conventional method. The values obtained by method can be used to establish the small-signal model of HEMT. The model can accurately reproduce the small-signal characteristic of the HEMT.