Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon
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- 作者：Xiaojuan Wanga ; b ; Dong Lia ; Qichong Zhanga ; Liping Zoua ; Fengli Wanga ; Jun Zhouc ; zhoujunzhou@tongji.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zengxing Zhanga ; zhangzx@tongji.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Graphene ; Schottky junction ; Electronic properties ; Photodetector
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：1 October 2015
- 年：2015
- 卷：592
- 期：part_PB
- 页码：281-286
- 全文大小：1009 K
文摘
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Different graphene/silicon heterostructures were fabricated.
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Electronic and optoelectronic properties of the heterostructures were studied.
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Graphene/silicon heterostructures were further explored for photodetectors.