Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry
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- 作者：Yan Zhou ; Guoshun Pan ; pangs@tsinghua.edu.cn" class="auth_mail ; Xiaolei Shi ; Hua Gong ; Guihai Luo ; Zhonghua Gu
- 关键词：Silicon carbide (SiC) ; Chemical mechanical planarization (CMP) ; Catalyst ; Removal ; Atomic step structure
- 刊名：Surface and Coatings Technology
- 出版年：25 July 2014
- 年：2014
- 卷：251
- 期：Complete
- 页码：48-55
- 全文大小：1753 K
文摘
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Using catalyst nanoparticles was developed for CMP of Si-face SiC to get a higher MRR.
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An ultra-smooth defect-free surface with atomic step structure and low Ra was achieved.
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Removal characteristics of catalyst assisted CMP and removal mechanism were studied.
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The formation of an atomic step-terrace morphology on the SiC surface was discussed.