Effect of neutron irradiation on charge collection efficiency in 4H-SiC Schottky diode

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• 作者：Jian Wu ; Yong Jiang ; Jiarong Lei ; Xiaoqiang Fan ; Yu Chen ; Meng Li ; Dehui Zou ; Bo Liu
• 关键词：Silicon carbide ; Neutron detector ; CCE ; Radiation hardness
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：21 January, 2014
• 年：2014
• 卷：735
• 期：Complete
• 页码：218-222
• 全文大小：1533 K

文摘

The charge collection efficiency (CCE) in 4H-SiC Schottky diode is studied as a function of neutron fluence. The 4H-SiC diode was irradiated with fast neutrons of a critical assembly in Nuclear Physics and Chemistry Institute and CCE for 3.5 MeV alpha particles was then measured as a function of the applied reverse bias. It was found from our experiment that an increase of neutron fluence led to a decrease of CCE. In particular, CCE of the diode was less than 1.3% at zero bias after an irradiation at 8.26脳10¹⁴ n/cm². A generalized Hecht's equation was employed to analyze CCE in neutron irradiated 4H-SiC diode. The calculations nicely fit the CCE of 4H-SiC diode irradiated at different neutron fluences. According to the calculated results, the extracted electron 渭蟿 product (渭蟿)_e and hole 渭蟿 product (渭蟿)_h of the irradiated 4H-SiC diode are found to decrease by increasing the neutron fluence.