Inverse tunnel magnetoresistance in epitaxial FeCo/MgO/Fe tunnel junctions patterned by in situ shadow-masks
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- 作者：Xiaoyang Gaoa ; Qiang Lia ; b ; c ; liqiang@qdu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Shandong Lia ; Jie Xua ; Youzhi Qina ; Xingjun Shia ; Shishen Yanb ; Guoxing Miaoc
- 关键词：Magnetic tunneling junction ; Inverse magnetoresistance ; Oxide/metal interface ; Annealing effect
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：25 March 2016
- 年：2016
- 卷：662
- 期：Complete
- 页码：79-83
- 全文大小：1337 K
文摘
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A simple method was proposed to achieving inverse TMR by carefully controlling the oxidation condition of the bottom layer.
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Fully epitaxial FeCo/MgO/Fe magnetic tunnel junctions patterned by in situ shadow-masks were fabricated.
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Inverse tunneling magnetoresistance of −39% was observed.