Effect of photocatalytic oxidation technology on GaN CMP
详细信息 查看全文
- 作者：Jie Wang jie-wang11@mails.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Tongqing Wang wtq@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guoshun Pan pangs@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xinchun Lu ; xclu@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：GaN ; Chemical mechanical polishing ; Photocatalytic oxidation ; Mechanism ; H2O2&ndash ; SiO2-based slurry
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 January 2016
- 年：2016
- 卷：361
- 期：Complete
- 页码：18-24
- 全文大小：3271 K
文摘
- •
Photocatalytic oxidation technology was introduced to GaN CMP for the first time and proves to be more efficient than before.
- •
XPS analysis reveals the planarization process by different N-type semiconductor particles.
- •
Analyzing the effect of pH on photocatalytic oxidation in GaN CMP.
- •
Proposing the photocatalytic oxidation model to reveal the removal mechanism.