The synergistic effect of mechanical and chemical factors on the CMP performance of TSV was investigated.
Down force and polishing time should be strictly controlled to guarantee high removal rate and low dishing.
A sufficiently high H2O2 concentration is required to prevent via protrusion by modifying the selectivity of Cu/Ti/TEOS.
Material removal models were established to elucidate the mechanism of via dishing/protrusion formation.