文摘
A novel 4H-SiC MESFET with serpentine channel for high power RF application is proposed. When the Hsd = 0.10 μm, the Id of the SC structure is about 21.5% larger than that of the DR structure. The SC-MESFET has the advantages of high breakdown voltage that is increased from 90 V to 132 V. The breakdown point has changed from the gate corner to the drain edge when the Hsd reaches to 0.10 μm or more. With the serpentine channel, the gate-source capacitance of SC structure is reduced by 15.7% compared with DR structure.