Electrical and Reliability Analysis for GDH High-k Films After Rapid Thermal Annealing

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• 作者：Xiaona Wang ; Xingqiang Zhang ; Yuhua Xiong ; ^{yuhua_xiong@sina.com} ; Jun Du ; Mengmeng Yang
• 关键词：High-k ; Co-sputtering ; HfO2 ; Gd2O3 ; RTA
• 刊名：Procedia Engineering
• 出版年：2012
• 出版时间：2012
• 年：2012
• 卷：27
• 期：Complete
• 页码：592-597
• 全文大小：487 K

文摘

The amorphous HfO2 doped Gd2O3 (GDH) film has been grown on p-type Si (001) substrates by radio frequency co-sputtering, and the thickness of GDH film was 4.4nm. The results of electrical tests showed that the ¦¤VFB of C-V curves reduced from 170mV to 40mV, dielectric constant increased from 19.6 to 21.3, and relaxation phenomena decreased after RTA. I-V curves showed that the leakage current density of GDH film was reduced from 9.6¡Á10-4 A/cm2 to 1.3¡Á10-5 A/cm2 after Rapid Thermal Annealing (RTA). The reliability studies on GDH gate dielectric show that the Time Zero Dielectric Breakdown (TZDB) was mainly caused by the accumulation of positive charges.