Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification

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• 作者：Didi Zhu ; Liang Ming ; Meiling Huang ; Zhaoyu Zhang ; Xinming Huang
• 关键词：A1. Directional solidification ; A1. Dislocation ; A2. Seed-assisted ; A3. Uniform grain sizes
• 刊名：Journal of Crystal Growth
• 出版年：15 January, 2014
• 年：2014
• 卷：386
• 期：Complete
• 页码：52-56
• 全文大小：4914 K

文摘

An approach to grain control using seed-assisted growth in directional solidification (DS) is reported in this paper. Proper multi-crystalline silicon seeds at the bottom of the crucible provided numerous fine nucleation points for the controlled grain growth in an optimized hot-zone. Low dislocation density was observed with large numbers of uniform small grains in the silicon ingot, although the grain size increased with crystal growth. Crystals produced using seed-assisted growth showed a higher and more uniform minority carrier lifetime with a much lower dislocation multiplication rate. A higher average solar cell conversion efficiency of about 0.5% in absolute value was obtained in the seed-assisted grown silicon in comparison with that in the seedless silicon under the same cell fabrication process.