Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped
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- 作者：Jie Sun ; Huiqing Sun ; sunhq@scnu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xinyan Yi ; Xian Yang ; Xuancong Fan ; Cheng Zhang ; Zhuding Zhang ; Zhiyou Guo
- 关键词：Barrier ; Mg doped ; Ultraviolet light-emitting diodes ; Efficiency droop ; Holes concentration
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：371-377
- 全文大小：1217 K
文摘
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Making all but the bottom barriers Mg-doped can alleviate the efficiency droop and enhance the rad recombination.
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Then the best holes density of the p-doped barriers has been confirmed.
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AlGaN-based UVLED with three different p-doped barriers are compared in detail.
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P-doping in the top barrier could not improve the performance and it has little change comparing to the old structure.
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The root of efficiency droop has been explored.