Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films
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- 作者：V. Craciuna ; valentin.craciun@inflpr.ro" class="auth_mail" title="E-mail the corresponding author ; D. Craciuna ; G. Socola ; S. Behdadb ; B. Boeslb ; C. Himcinschic ; H. Makinod ; M. Socole ; D. Simeonef ; g
- 关键词：SiC thin films ; Pulsed laser deposition ; Radiation effect ; Mechanical properties
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：30 June 2016
- 年：2016
- 卷：374
- 期：Complete
- 页码：339-345
- 全文大小：1241 K
文摘
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Thin polycrystalline SiC films grown by the pulsed laser deposition technique were irradiated by 800 keV Ar ions at a dose of 2.6 × 1014 at/cm2.
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The SiC films hardness and Young modulus values significantly decreased after irradiation.
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Glancing X-ray diffraction investigations showed a partial transformation of the SiC hexagonal phase into the cubic phase.
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Smooth PLD grown thin films are excellent for radiation effects investigations using XRR, GIXRD and nanoindentation techniques.