Deposition of transparent conductive mesoporous indium tin oxide thin films by a dip coating process

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• 作者：Xueao Zhang ; Wenjian Wu ; Tian Tian ; Yahui Man ; Jianfang Wang
• 关键词：A. Thin films ; B. Sol– ; gel chemistry ; C. X-ray diffraction ; D. Optical properties ; D. Semiconductivity
• 刊名：Materials Research Bulletin
• 出版年：2008
• 出版时间：1 April 2008
• 年：2008
• 卷：43
• 期：4
• 页码：1016-1022
• 全文大小：785 K

文摘

Cetyltrimethyl ammonium bromide (CTAB) templated mesoporous indium tin oxide (ITO) thin films were deposited on quartz plates by an evaporation-induced self-assembly (EISA) process using a dip coating method. The starting solution was prepared by mixing indium chloride, tin chloride, and CTAB dissolved in ethanol. Five to fifty mole percent Sn-doped ITO films were prepared by heat-treatment at 400 °C for 5 h. The structural, adsorptive, electrical, and optical properties of mesoporous ITO thin films were investigated. Results indicate that the mesoporous ITO thin films have an ordered two-dimensional hexagonal (p6mm) structure, with nanocrystalline domains in the inorganic oxide framework. The continuous thin films have highly ordered pore sizes (>20 Å), high Brunauer–Emmett–Teller (BET) surface area up to 340 m²/g, large pore volume (>0.21 cm³/g), outstanding transparency in the visible range (>80 % ), and show a minimum resistivity of ρ = 1.2 × 10⁻² Ω cm.