First-principles study of the charge transfer and evolution of Si doping 2N2Ta islands adsorption on TaN (001) surfaces
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- 作者：Yuan Ren ; renyuan_bt@126.com" class="auth_mail" title="E-mail the corresponding author ; Honglv Zhang ; Chao Zhang ; Haiqing Zeng ; Xuejie Liu
- 关键词：Si&ndash ; 2N2Ta Island ; Charge transfer ; Adsorption and diffusion ; Density functional calculation
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：350-355
- 全文大小：1323 K
文摘
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The Si is at a position diagonal to the Ta of 2N2Ta island in deposition process.
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Si and the TaN tended to separate and formed a two-phase composite structure.
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Si atoms tended to locate at the boundary position during deposition process.