Effect of CdS modification on photoelectric properties of TiO2/PbS quantum dots bulk heterojunction
详细信息 查看全文
- 作者：Xin Shia ; b ; Jianping Xub ; xjp0335@163.com" class="auth_mail" title="E-mail the corresponding author ; Shaobo Shic ; Xiaosong Zhangb ; Shubin Lib ; Chang Wangb ; Xueliang Wangb ; Linlin Lib ; Lan Lib ; lilan@tjut.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Quantum dots ; Bulk heterojunction ; Defect states ; Trap states
- 刊名：Journal of Physics and Chemistry of Solids
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：93
- 期：Complete
- 页码：33-39
- 全文大小：2247 K
文摘
- •
The TiO2/PbS(CdS) QDs bulk heterojunction was fabricated by SILAR method.
- •
The additional CdS improved the photoelectric conversion properties.
- •
The CdS modification can reduce trap states and carriers recombination.