Non-epitaxial pulsed laser deposition of Ag₂Se thermoelectric thin films for near-room temperature applications

详细信息    查看全文

• 作者：Kexiong Zhou^a ; ^b ; ^c ; Jikun Chen^d ; ^{jikunchen@ustb.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; RenKui Zheng^a ; Xinyou Ke^e ; Tiansong Zhang^b ; Xun Shi^a ; ^b ; ^{xshi@mail.sic.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Lidong Chen^a ; ^b ; ^f
• 关键词：Thermoelectric ; Ag2Se ; Thin film growth ; Pulsed laser deposition
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：1 August 2016
• 年：2016
• 卷：42
• 期：10
• 页码：12490-12495
• 全文大小：1505 K

文摘

Non-epitaxial growth of Ag₂Se thermoelectric thin films on (La, Sr) (Al, Ta)O₃ or glass substrates at a relatively low temperature of 100 °C has been achieved by using pulsed laser deposition (PLD). The deposition kinetics has been optimized by varying the background interactions with laser induced plasma plume. The shockwave plasma expansion is to be critical for the structure, composition and morphologies of thin films. As-grown Ag₂Se thin films under the optimized deposition condition exhibit comparable transport performances as compared to the reported Ag₂Se bulk materials at similar carrier concentrations. The non-epitaxial correlation between the Ag₂Se thin films and their substrates is expected to benefit for the further fabrication of in plan thermoelectric micro-devices for room temperature applications.