Growth and dielectric properties of Ca₃NbGa₃Si₂O₁₄ crystals

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• 作者：Wang ; Zengmei ; Yuan ; Duorong ; Xu ; Dong ; Lü ; Mengkai ; Shi ; Xuzhong ; Su ; Wenbin ; Zhao ; Minglei ; et. al.
• 关键词：Oxide materials ; Crystal growth ; X-ray diffraction ; Dielectric response
• 刊名：Journal of Alloys and Compounds
• 出版年：2004
• 出版时间：May 12, 2004
• 年：2004
• 卷：370
• 期：1-2
• 页码：291-295
• 全文大小：210 K

文摘

A new langasite type single crystal Ca₃NbGa₃Si₂O₁₄ (CNGS) was grown by Czochralski (CZ) method. The structure of CNGS crystal was determined by X-ray powder diffraction, the lattice parameters were a=0.8087 ± 0.0001nm, c=0.4974 ± 0.0002nm, V=0.2817 ± 0.0002nm³; The congruency of CNGS was examined by measuring the chemical composition of the grown crystal by quantitative X-ray fluorescent (XRF) analysis. The melting point of CNGS crystal was measured by using the differential scanning calorimetry (DSC). Dielectric properties of (110) wafer plate were studied in the temperature range from 298.15 to 873.15K; the frequency dependence of dielectric loss in the frequency range 10Hz–13MHz was measured.