Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum
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- 作者：Valdas Jokubavicius ; valjo@ifm.liu.se" class="auth_mail" title="E-mail the corresponding author ; Jianwu Sun ; Xinyu Liu ; Gholamreza Yazdi ; Ivan. G. Ivanov ; Rositsa Yakimova ; Mikael Syvä ; jä ; rvi
- 关键词：A1. Mass transfer ; A1. Substrates ; A2. Single crystal growth ; B2. Semiconducting materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：448
- 期：Complete
- 页码：51-57
- 全文大小：2606 K
文摘
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Process window for growth of SiC polytypes (6H-, 4H- or 3C–SiC) on nominally on-axis substrates.
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Effects of thermal insulation and induction coil position on the temperature profile engineering in the graphite crucible.
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Demonstration of 200 µm thick N and B co-doped 6H–SiC on nominally on-axis substrates.