Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE
详细信息 查看全文
- 作者：Li Wang ; wli@toyota-ti.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Omar Elleuch ; Yasuhiro Shirahata ; Nobuaki Kojima ; Yoshio Ohshita ; Masafumi Yamaguchi
- 关键词：A1. Characterization ; A3. Chemical beam epitaxy ; B1. Nitrides ; B1. Alloys ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：437
- 期：Complete
- 页码：6-9
- 全文大小：548 K
文摘
- •
GaAsN grown by CBE shows higher value of mobility.
- •
PL peaks below 1.4 eV are original from N atoms incorporated.
- •
The presence of N induced localized states is confirmed.
- •
The decreasing in mobility is partly ascribed to N atoms disorder alloy.