Correlation between carrier transport and orientation evolution of polycrystalline transparent conductive Al-doped ZnO films

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• 作者：Junichi Nomoto ; ^{nomoto.junichi@kochi-tech.ac.jp} ; Hisao Makino ^{makino.hisao@kochi-tech.ac.jp} ; Tetsuya Yamamoto ^{yamamoto.tetsuya@kochi-tech.ac.jp}
• 关键词：Carrier transport ; Transparent conducting oxide ; X-ray diffraction ; Al-doped ZnO ; Ga-doped ZnO ; Magnetron sputtering ; Ion plating
• 刊名：Thin Solid Films
• 出版年：2016
• 出版时间：1 December 2016
• 年：2016
• 卷：620
• 期：Complete
• 页码：2-9
• 全文大小：1419 K
• 卷排序：620

文摘

A correlation between orientation evolution and carrier transport 10-nm-thick critical layers (CLs) are made from Ga-doped ZnO films by ion plating. The use of CLs improves grain orientation of Al-doped ZnO films on CLs. The effect of CLs on carrier transport at grain boundaries is demonstrated. 500-nm-thick AZO films with CLs exhibited a high Hall mobility of 50.1 cm2/Vs.