Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms
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- 作者：Bo Yao ; Yanyan Zhu ; Zebo Fang ; csfzb@usx.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yongsheng Tan ; Shiyan Liu ; Junjun Yuan ; Qinglin Qiu
- 关键词：Leakage current mechanisms ; Fowler-Nordheim tunneling ; Schottky emission ; Tm2O3
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：29 July 2016
- 年：2016
- 卷：611
- 期：Complete
- 页码：52-55
- 全文大小：455 K
文摘
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The leakage current mechanisms of Al/Tm2O3/Si stack structures were extracted.
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The conduction mechanisms are Schottky emission and Frenkel-Poole conduction.
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The barrier height for Pt/Tm2O3 and Al/Tm2O3 are 2.95 eV and 1.75 eV.
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The energy band diagrams of Pt (Al)/Tm2O3/Si capacitor were constructed.