Dielectric Si-doped alumina thin films were prepared by sol-gel method.
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limg="/entities/sbnd" src="/sd/grey_pxl.gif" class="glyphImg imgLazyJSB">Si bonds and cation vacancies
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Excellent dielectric properties of Si-doping alumina thin films were achieved.
The leakage current reduces two orders of magnitude when Si concentration is 2mol%.
Breakdown strength increased by 93%, comparing with undoped alumina film.