Investigation of the effect of Mg doping for improvements of optical and electrical properties

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• 作者：Mujdat Caglar ; ^{mcaglar@anadolu.edu.tr" class="auth_mail" title="E-mail the corresponding author} ; ^{mcaglar@semiconductorslab.com" class="auth_mail" title="E-mail the corresponding author} ; Yasemin Caglar ; Saliha Ilican
• 关键词：Mg doped ZnO films ; Sol gel ; Burstein&ndash ; Moss effect ; Single oscillator parameters ; Hall effect
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：15 March 2016
• 年：2016
• 卷：485
• 期：Complete
• 页码：6-13
• 全文大小：2533 K

文摘

Sol–gel spin coating method was used for the deposition of nanostructured undoped and Mg doped ZnO films. The effects of magnesium incorporation on the crystalline structure were investigated by XRD measurements and the structural deterioration was observed in the crystalline quality of the films with respect to increasing in Mg doping. All the samples exhibited a wurtzite structure. From the scanning electron microscopy (SEM) images obtained to investigate the surface morphology it was detected that an increase in Mg doping caused an improvement on the surface roughness and a reduction in the number of voids on the surface. To evaluate the absorption edges of the produced samples depending on the Mg, different methods were used and according to the obtained results, a shifting towards to high energies for the optical band gap was observed in each method. By using the single oscillator model, developed by DiDomenico and Wemple, the refractive index dispersion of the films was analyzed. E_o and E_d values of the 5% Mg doped film were found to be 5.76 eV and 11.80 eV, respectively. Within the scope of electrical properties, from Hall effect measurements, it was determined that all the films exhibited n-type behavior and the carrier concentration increased from 1.49×10¹⁶ to 1.20×10¹⁷ cm⁻³ with increasing Mg doping.