The I–V characteristics of InAs/GaAs quantum dot laser

详细信息    查看全文

• 作者：Chuanhe Ma^a ; Hailong Wang^a ; ^{hlwang@mail.qfnu.edu.cn"" rel=""nofollow} ; ^{phyhlwang71@126.com"" rel=""nofollow} ; Yan Zhou^a ; Qian Gong^b ; Peng Chen^b ; Chunfang Cao^b ; Songlin Feng^b ; Shiguo Li^c
• 关键词：Bandgap ; Quantum dot laser ; I– ; V characteristics ; GSMBE
• 刊名：Physica B
• 出版年：2011
• 出版时间：1 October 2011
• 年：2011
• 卷：406
• 期：19
• 页码：3636-3639
• 全文大小：717 K

文摘

The I–V characteristics of an InAs/GaAs quantum dot (QD) laser diode have been investigated under both the high and low input current conditions. Under the low current condition, the I–V curve obeys the Shockley equation, from which the forbidden energy gap of the junction can be derived. On the other hand, in the high current range, the I–V characteristics violate the Shockley equation and the device tends to operate as a resistance. In addition, the I–V curve can be used to fit the temperature coefficient of the forward voltage, which is a critical parameter for determining the junction temperature of the laser diode.