High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlO_x interlayer

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• 作者：Peng Wang ; Xin Li ; Hanhui Liu ; Shumei Lai ; Yuye Chen ; Yihong Xu ; Songyan Chen ; ^{sychen@xmu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Cheng Li ; Wei Huang ; Dingliang Tang
• 关键词：A. Amorphous materials ; A. Semiconductor ; B. Epitaxial growth ; B. Phase equilibria
• 刊名：Materials Research Bulletin
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：72
• 期：Complete
• 页码：60-63
• 全文大小：1632 K

文摘

High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO_x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.