Dependence of RF power on the phase transformation for boron nitride films deposited on graphite at room temperature

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• 作者：Xuxin Yang ; Hongdong Li ; Yingai Li ; Xianyi Lü ; Shiyong Gao ; Pinwen Zhu ; Qing Zhang ; Tiechen Zhang ; Guangtian Zou
• 关键词：A1. Crystal structure ; A3. Physical vapor deposition processes ; B1. Nitrides ; B2. Semiconducting III– ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2009
• 出版时间：1 July 2009
• 年：2009
• 卷：311
• 期：14
• 页码：3716-3720
• 全文大小：372 K

文摘

Cubic boron nitride (cBN) thick films deposited on mainly c-axis-oriented graphite substrate at room temperature and zero bias by radio frequency (RF) magnetron sputtering were studied. In the growth process, RF power plays a key role in determining the content of cubic phase in films, while the conventional substrate heating and biasing have been neglected. With increase in RF power, the dominated content of films converts from explosion boron nitride (eBN) to cBN. The transformation mechanism has been discussed. The unique structural properties of the “soft” graphite are favorable to propose simple conditions for growing “hard” cBN films. Furthermore, the optical band gap of BN films having 90 % cubic phase is of 5.8 eV obtained from ultraviolet–visible optical transmission measurement. The electron field emission examination shows that cBN film on graphite has a high emission current density of 2.8×10⁻⁵ A/cm² at an applied field of 30 V/μm.