Synthesis and optical properties of purified translucent, orthorhombic boron nitride films
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- 作者：Xuxin Yang ; Hongdong Li ; Yingai Li ; Xianyi Lv ; Guangtian Zou
- 关键词：A1. Crystal structure ; A3. Physical vapor deposition processes ; B1. Nitrides ; B2. Semiconducting III– ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2010
- 出版时间：15 November 2010
- 年：2010
- 卷：312
- 期：23
- 页码：3434-3437
- 全文大小：384 K
文摘
Large-area (>1 cm2) freestanding translucent orthorhombic boron nitride (oBN) films have been synthesized by magnetron sputtering at a low radio-frequency power of 120 W. The structural characterizations were performed by means of X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is demonstrated that oBN is a direct band gap semiconductor (Eg3.43 eV). Excited by ultraviolet laser (wavelength at 325 nm), the oBN films emit strong white light, which can be seen by the naked eyes in the dark. In the photoluminescence spectrum, besides the ultraviolet near-band-edge radiative recombination emission, there are three visible emission bands (centered at 400, 538, and 700 nm) arising from the defect-related deep-level centers of oBN, which are mixed to form the white light emission. The hardness and elastic modulus of oBN films are 11.5 and 94 GPa, respectively, examined by nanoindentation measurements.