Growth and scintillation properties of (Lu_1???x Tm_x)₂SiO₅ [x?=?0.001, 0.01, 0.1, 1]

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• 作者：Daisuke Totsuka ; Takayuki Yanagida ; Yutaka Fujimoto ; Yuui Yokota ; Akira Yoshikawa
• 关键词：Scintillator ; Tm3+ ; Oxyorthosilicate
• 刊名：Radiation Measurements
• 出版年：2013
• 出版时间：August, 2013
• 年：2013
• 卷：55
• 期：Complete
• 页码：116-119
• 全文大小：1188 K

文摘

(Lu_1???xTm_x)₂SiO₅ (x?=?0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the ¦Ì-PD method. In transmittance measurement, absorption bands due to Tm³⁺ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790?nm and they could be ascribed to the transition from the ³H₆ ground state to its excited states, ¹I₆, ³P₆,¹D₂, ¹G₄, ³F₃ and ³H₄, respectively. Strong emission peak due to ¹D₂?¡ú?³F₄ transition of Tm³⁺ was shown at 453?nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9?¦Ìs. Tm 1 % doped one exhibited the highest light yield of 3530?¡À?200?photons/MeV when excited by ¹³⁷Cs gamma-ray exposure.