Effect of Mg doping on optical and electrical properties of SnO₂ thin films: An experiment and first-principles study

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• 作者：Xia Li^a ; Rui Deng^a ; ^{dengrui79@126.com" class="auth_mail" title="E-mail the corresponding author} ; Yongfeng Li^b ; ^c ; ^{liyongfeng@jlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Bin Yao^b ; ^c ; Zhanhui Ding^b ; Jieming Qin^a ; Qingcheng Liang^a
• 关键词：SnO2 ; Mg doping ; Sol&ndash ; gel method ; P-type semiconductor ; Photoluminescence ; First-principles calculation
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：42
• 期：4
• 页码：5299-5303
• 全文大小：1321 K

文摘

Transparent Mg-doped p-type conductive SnO₂ thin films were fabricated on quartz substrates by sol–gel method. Effect of Mg doping on structural, morphological, optical, and electrical properties of SnO₂ films were investigated. A single phase of tetragonal rutile structure was observed in Mg-doped SnO₂ films. The optical bandgap energy of the Mg-doped SnO₂ films showed a systematical redshift with respect to the undoped SnO₂ film, and the resistivity significantly increased with the increase of Mg concentration. A conduction type transform from n to p was also observed. The strong ultraviolet and comparatively weak blue/green emissions were observed in room temperature photoluminescence, suggesting the dipole-forbidden rule of bulk SnO₂ is broken in Mg-doped SnO₂ films. These results were supported by first-principles electronic structure calculations.