Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy
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- 作者：Xue Liua ; Xiaohua Wanga ; biewang2001@126.com" class="auth_mail" title="E-mail the corresponding author ; Dengkui Wanga ; Jilong Tanga ; jl_tangcust@163.com" class="auth_mail" title="E-mail the corresponding author ; Xuan Fanga ; Dan Fanga ; Yongfeng Lib ; c ; Bin Yaob ; c ; Xiaohui Maa ; Haizhu Wanga ; Zhipeng Weia
- 关键词：MgO/InP ; Thin film ; Heterostructure ; Band offset ; Atomic layer deposition
- 刊名：Vacuum
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：134
- 期：Complete
- 页码：136-140
- 全文大小：876 K
文摘
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Valence band offset of MgO/InP heterojunction was measured by X-ray photoelectron spectroscopy.
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Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation.
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The valence-band and conduction-band offset were 5.33 eV and 1.16 eV for two sets of core level pairs.
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Formation of considerable space charge like layer at the interface of MgO/InP heterostructure.