Twistable nonvolatile organic resistive memory devices

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• 作者：Sunghoon Song^a ; ¹ ; Jingon Jang^b ; Yongsung Ji^a ; Sungjun Park^a ; Tae-Wook Kim^c ; Younggul Song^b ; Myung-Han Yoon^a ; Heung Cho Ko^a ; Gun-Young Jung^a ; Takhee Lee^b ; ^{tlee@snu.ac.kr}
• 关键词：Organic memory ; Twistable ; Nonvolatile ; Resistive memory
• 刊名：Organic Electronics
• 出版年：2013
• 出版时间：August, 2013
• 年：2013
• 卷：14
• 期：8
• 页码：2087-2092
• 全文大小：1539 K

文摘

We fabricated an 8 ¡Á 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 ¡Á 10⁴ s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to ¡«30¡ã. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations.