Thermochemical hydrogen sensor composed of chalcogenide thin film and Pt/Al2O3 catalyst was fabricated. Voltage signal of the n–p junction type sensor was higher than monomorphic type sensor. Heat dissipation of n–p junction type sensor was superior to that of monomorphic type one. Response and recovery time of n–p junction type sensor were 27.4 and 9.6 s in 3% H2/air.