Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells

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• 作者：Shahzada Qamar Hussain ; Sunbo Kim ; Shihyun Ahn ; Nagarajan Balaji ; Youngseok Lee ; Jae Hyeong Lee ; Junsin Yi
• 关键词：ITO ; Zr films ; Anti-reflection layer ; Work function ; Hall mobility ; ITO ; Zr/a-Si ; H(p) interface ; HIT solar cell
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：March, 2014
• 年：2014
• 卷：122
• 期：Complete
• 页码：130-135
• 全文大小：1385 K

文摘

We report the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell. The addition of oxygen (O₂) to argon (Ar) flow ratio during the deposition process improves the Hall mobility of the ITO:Zr films while the carrier concentration decreased. The small amount of oxygen resulted in an enhancement of work function while excess amount of O₂ was not suitable for the electrical and surface properties of ITO:Zr films. The increase of O₂/Ar flow ratio from 0% to 0.4% improved the work function from 5.03 to 5.13 eV while the conductivity of ITO:Zr films remained about the same. The ITO:Zr films were employed as a front anti-reflection layer in a HIT solar cell and the best photo-voltage parameters were found to be V_oc=710 mV, J_sc=33.66 mA/cm², FF=72.4%, and 畏=17.31% for the O₂/Ar flow ratio of 0.4%. The increase of ITO:Zr work function leads to an increase in open circuit voltage (V_oc) and fill factor (FF) of the device. Therefore, the ITO:Zr films with high work function can be used to modify the front barrier height in the HIT solar cell.