Discharge characteristics of MgO and MgOZrO₂ protective films prepared by electron beam evaporation

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• 作者：Kim ; Rakhwan ; Kim ; Younghyun ; Park ; Jong-Wan
• 关键词：MgO&ndash ; ZrO₂ film ; Protective layer ; Firing voltage ; Memory coefficient ; Plasma display panel
• 刊名：Materials Science and Engineering: B
• 出版年：2001
• 出版时间：June 21, 2001
• 年：2001
• 卷：83
• 期：1-3
• 页码：55-60
• 全文大小：304 K

文摘

In order to improve both the operating voltage and the memory coefficient (MC) of a protective layer for AC plasma display panels, controlled amount of ZrO₂ was added to the pure MgO. The effects of the ZrO₂ addition on both the electrical properties (V_f and V_s) and the microstructure of the Mg_2−2xZr_xO₂ films deposited by e-beam evaporation were investigated. As the [ZrO₂/(MgO+ZrO₂)] ratio of the protective materials increased, the oxygen content in films increased, and the relative ratio of (200)/(111) also increased with overall peak shifting to lower angular diffraction positions. The firing voltage of the MgO–ZrO₂ protective films, when the [ZrO₂/(MgO+ZrO₂)] ratio was 0.1, was 5 % lower than that of the conventional MgO protective films with higher MC.