Improved surface and electrical properties of passivated GaSb with less alkaline sulfide solution

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• 作者：Dongyan Tao ; Yu Cheng ; Jingming Liu ; Jie Su ; Tong Liu ; Fengyun Yang ; Fenghua Wang ; Kewei Cao ; Zhiyuan Dong ; Youwen Zhao
• 关键词：GaSb ; Sulphurization ; X-ray photoelectron spectroscopy (XPS) ; Native oxides ; Au Schottky barrier diodes (SBDs)
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：40
• 期：Complete
• 页码：685-689
• 全文大小：1753 K

文摘

The surface quality of HCl-etched and ammonium sulfide [(NH₄)₂S]-based treated bulk n-GaSb(100) were compared using x-ray photoelectron spectroscopy (XPS) and TOF-SIMS. It has been found that native oxides present on the GaSb surface are more effectively removed when etched with concentrated HCl solution. With additional [(NH₄)₂SO₄+S] substances or hydrogen ions in the passivation solution, the treated samples displayed significant reduction of native oxides and formation of the sulfides compared with pure (NH₄)₂S solution. The treated samples also result in a noteworthy improvement in the current–voltage (I–V) characteristics of Au/n-GaSb Schottky contacts, as evidenced by the lower ideality factor (n), higher barrier height (桅_b) and higher rectification ratio at ±0.2 V. The I–V measurement provided definitive confirmation of XPS and TOF-SIMS results, establishing the need for less alkaline solution for greater passivation stability.