Improvement and luminescent mechanism of Bi₄Si₃O₁₂ scintillation crystals by Dy³⁺ doping

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• 作者：Bobo Yang^a ; Jiayue Xu^a ; ^{xujiayue@sit.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Yan Zhang^a ; Haibo Zeng^a ; Tian Tian^a ; Yaoqing Chu^a ; Yubai Pan^b ; Qingzhi Cui^a
• 关键词：BSO ; Vertical Bridgeman ; Scintillation ; Dy doping ; Light yield
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2016
• 出版时间：21 January 2016
• 年：2016
• 卷：807
• 期：Complete
• 页码：1-4
• 全文大小：930 K

文摘

Bi₄Si₃O₁₂:Dy (BSO:Dy) crystals have been grown by the modified vertical Bridgeman method and doping effects on light yield have been investigated. Doped with small amount of Dy₂O₃ (0.05–0.3 mol%), the light yield and energy resolution of BSO crystals were improved significantly. However, high concentrations of Dy₂O₃ doping resulted in the decrease of light yield. Pulse height measurement under γ-ray irradiation shows that 0.1 mol% Dy₂O₃ doping can make the relative light yield of BSO from 24.6% to 35.8% of BGO crystal, with fast decay time of ~90 ns. X-ray excited radioluminescence spectra showed Dy doping has an extra emission in the host emission band (Bi³⁺ emission) and acts as a sensitizer to the Bi luminescent center. These results indicate that BSO:Dy crystal could be one of promising candidates for replacing BGO in some application such as electromagnetic calorimeter and dual readout in nuclear or high energy physics.