Synthesis and characterization of hysteresis-free zirconium oligosiloxane hybrid materials for organic thin film transistors

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• 作者：Yuedan Wang^a ; ^{yuedan2015@163.com} ; Dong Wang^a ; Xing Qing^a ; Hongdoo Kim^b ; ^{hdkim@kyu.edu.cn}
• 关键词：OTFTs ; Gate insulator ; Hybrid material ; Hysteresis-free
• 刊名：Synthetic Metals
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：223
• 期：Complete
• 页码：226-233
• 全文大小：2616 K
• 卷排序：223

文摘

A robust, solution processed zirconium oligosiloxane gate dielectric is demonstrated. It shows long-term stability, high dielectric strength and low leakage current. High electrical performance OTFTs and nearly hysteresis-free have been obtained. The gate dielectric is suitable for fabricating reliable electronic devices.