Ge dots formation using Si(100)-c(4×4) surface reconstruction
详细信息 查看全文
- 作者：Yuhki Satoh ; yu-ki@ecei.tohoku.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Yuhki Itoh ; Tomoyuki Kawashima ; Katsuyoshi Washio
- 关键词：A1. Nanostructures ; A1. Low dimensional structures ; A3. Molecular beam epitaxy ; B2. Semiconducting germanium
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 March 2016
- 年：2016
- 卷：438
- 期：Complete
- 页码：1-4
- 全文大小：1321 K
文摘
- •
Effect of carbon coverage, Ge thickness and growth temperature on Ge dots formation was investigated.
- •
Small and dense dots were formed at the carbon coverage of 0.25 ML.
- •
Dot density of about 1.8×1010 cm−2 was achieved for Ge thickness and temperature of 4 nm and 400 ˚C, respectively.
- •
Standard deviation of dot diameter was the lowest of 12 nm at Ge=4 nm.