Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation
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- 作者：Yuhki Satoh ; yu-ki@ecei.tohoku.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Yuhki Itoh ; Tomoyuki Kawashima ; Katsuyoshi Washio
- 关键词：Molecular Beam Epitaxy ; Silicon ; Germanium ; Carbon ; Germanium Dots ; Mediated Growth
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：602
- 期：Complete
- 页码：29-31
- 全文大小：734 K
文摘
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The effect of Si–C reaction temperature on Ge dot formation was investigated.
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Small and dense dots were obtained for TR = 750 °C.
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The dot density of about 2 × 1010 cm− 2 was achieved for Ge = 3 to 5 nm.
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The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.