Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate

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• 作者：Yuhki Satoh ; Yuhki Itoh ; ^{itoh.yuhki@ecei.tohoku.ac.jp} ; Tomoyuki Kawashima ; Katsuyoshi Washio
• 关键词：Molecular beam epitaxy (MBE) ; Si ; Carbon ; Ge dot ; Mediated growth
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：621
• 期：Complete
• 页码：42-46
• 全文大小：1041 K
• 卷排序：621

文摘

Densification and shrinkage of dots at fast Ge growth rate (GR) over 2 nm/min Formation of small and dense Ge dots at low Ge growth temperature (TG) of 450 °C Effective increase in nucleation probability of Ge adatoms at fast GR or low TG Formation of Ge dots about 25 nm in mean diameter and 1.1 × 1011 cm− 2 in density