Thermoelectric properties of In_1.3?xSn_xSe prepared by spark plasma sintering method

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• 作者：Yongbiao Zhai ; Qiushi Zhang ; Jun Jiang ; ^{jjun@nimte.ac.cn} ; Ting Zhang ; Yukun Xiao ; Shenghui Yang ; Gaojie Xu
• 关键词：In1.3&minus ; xSnxSe ; Thermoelectric performance ; Spark plasma sintering
• 刊名：Journal of Alloys and Compounds
• 出版年：2013
• 出版时间：15 March, 2013
• 年：2013
• 卷：553
• 期：Complete
• 页码：270-272
• 全文大小：592 K

文摘

Polycrystalline In_1.3?xSn_xSe samples are prepared by melting and spark plasma sintering methods. The substitution of Sn causes the decrease of the band gap and the increase of carrier concentration, thus the improvement of power factor. The lattice thermal conductivity is effectively decreased with increasing the Sn content. For the sample of x = 0.05, the ZT value of 0.66 is achieved at 700 K, 57 % higher than that of the unsubstituted sample, showing potential applications in the intermediate temperature range.