The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition
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- 作者：Jun Zhanga ; Wu Tiana ; Feng Wua ; Qixin Wana ; Zhujuan Wanga ; Jin Zhanga ; Yulian Lia ; Jiangnan Daia ; daijiangnan@mail.hust.edu.cn" class="auth_mail ; Yanyan Fanga ; Zhihao Wua ; Changqing Chena ; cqchen@hust.edu.cn" class="auth_mail ; Jintong Xub ; Xiangyang Lib
- 关键词：GaN ; Nonpolar ; Nitridation ; MOCVD ; Raman spectra
- 刊名：Applied Surface Science
- 出版年：15 July 2014
- 年：2014
- 卷：307
- 期：Complete
- 页码：525-532
- 全文大小：3733 K
文摘
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Nonpolar a-plane GaN with substrate nitridation was directly grown on r-plane sapphire by MOCVD.
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The anisotropic surface morphology evolutions for the samples with and without nitridation process were investigated by controlled growth terminations.
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The reasons responsible for the effects of growth temperature of substrate nitridation on the growth of a-plane GaN were investigated in detail.