Pulsed laser irradiation-induced microstructures in the Mn ion implanted Si

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• 作者：Muneyuki Naito^a ; ^c ; ^{naito22@center.konan-u.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; Ryo Yamada^a ; Nobuya Machida^a ; Yusuke Koshiba^b ; Akira Sugimura^b ; Tamao Aoki^b ; Ikurou Umezu^b
• 关键词：Pulsed laser melting ; Hyperdoping ; Transmission electron microscopy
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2015
• 出版时间：15 December 2015
• 年：2015
• 卷：365
• 期：part_PA
• 页码：110-113
• 全文大小：1723 K

文摘

We have examined microstructures induced by pulsed-laser-melting for the Mn ion implanted Si using transmission electron microscopy. Single crystalline Si(0 0 1) wafers were irradiated with 65 keV and 120 keV Mn ions to a fluence of 1.0 × 10¹⁶/cm² at room temperature. The ion beam-induced amorphous layers in the as-implanted samples were melted and resolidified by pulsed YAG laser irradiation. After laser irradiation with appropriate laser fluence, the surface amorphous layers recrystallize into the single crystalline Si. The Mn concentration becomes higher in the near-surface region with increasing the number of laser shots. The migrated Mn atoms react with Si atoms and form the amorphous Mn–Si in the Si matrix.