Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

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• 作者：Yifei Mu^a ; ^{Y.Mu@student.liverpool.ac.uk" class="auth_mail" title="E-mail the corresponding author} ; Ce Zhou Zhao^b ; ^{cezhou.zhao@xjtlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Yanfei Qi^b ; ^{yanfei.qi01@xjtlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Sang Lam^b ; ^{s.lam@xjtlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Chun Zhao^c ; ^{garyzhao@ust.hk" class="auth_mail" title="E-mail the corresponding author} ; Qifeng Lu^a ; ^{qifeng@liverpool.ac.uk" class="auth_mail" title="E-mail the corresponding author} ; Yutao Cai^b ; ^{yutao.cai@xjtlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Ivona Z. Mitrovic^a ; ^{ivona@liverpool.ac.uk" class="auth_mail" title="E-mail the corresponding author} ; Stephen Taylor^a ; ^{s.taylor@liverpool.ac.uk" class="auth_mail" title="E-mail the corresponding author} ; Paul R. Chalker^d ; ^{pchalker@liverpool.ac.uk" class="auth_mail" title="E-mail the corresponding author}
• 关键词：On-site radiation response ; Real-time I&ndash ; V/C&ndash ; V test ; High-κ dielectrics ; Total-dose induced defects ; HfO2
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：1 April 2016
• 年：2016
• 卷：372
• 期：Complete
• 页码：14-28
• 全文大小：1942 K

文摘

The construction of a turnkey real-time and on-site radiation response testing system for semiconductor devices is reported. Components of an on-site radiation response probe station, which contains a 1.11 GBq Cs¹³⁷ gamma (γ)-ray source, and equipment of a real-time measurement system are described in detail for the construction of the whole system. The real-time measurement system includes a conventional capacitance–voltage (C–V) and stress module, a pulse C–V and stress module, a conventional current–voltage (I–V) and stress module, a pulse I–V and stress module, a DC on-the-fly (OTF) module and a pulse OTF module. Electrical characteristics of MOS capacitors or MOSFET devices are measured by each module integrated in the probe station under continuous γ-ray exposure and the measurement results are presented. The dose rates of different gate dielectrics are calculated by a novel calculation model based on the Cs¹³⁷ γ-ray source placed in the probe station. For the sake of operators’ safety, an equivalent dose rate of 70 nSv/h at a given operation distance is indicated by a dose attenuation model in the experimental environment. HfO₂ thin films formed by atomic layer deposition are employed to investigate the radiation response of the high-κ material by using the conventional C–V and pulse C–V modules. The irradiation exposure of the sample is carried out with a dose rate of 0.175 rad/s and ±1 V bias in the radiation response testing system. Analysis of flat-band voltage shifts (ΔV_FB) of the MOS capacitors suggests that the on-site and real-time/pulse measurements detect more serious degradation of the HfO₂ thin films compared with the off-site irradiation and conventional measurement techniques.