Ferroelectric and dielectric properties of vanadium-doped Ba(Ti_0.90Zr_0.10)O₃ ceramics

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• 作者：F. Moura ; A.Z. Simõ ; es ; L.S. Cavalcante ; M.A. Zaghete ; J.A. Varela ; E. Longo
• 关键词：Ceramics ; Ferroelectrics ; Solid-state reactions ; Chemical synthesis ; Vacancy information
• 刊名：Journal of Alloys and Compounds
• 出版年：2008
• 出版时间：20 October 2008
• 年：2008
• 卷：466
• 期：1-2
• 页码：L15-L18
• 全文大小：392 K

文摘

Ba(Zr_0.10Ti_0.90)O₃ (BZT) and V substituted BZT ceramics (BZT:V) were prepared by mixed oxide method and polymeric precursor method. The effect of V⁵⁺ addition in the BZT lattice was evaluated by X-ray diffraction (XRD) and Fourier transform Raman (FT-Raman) spectroscopy. When vanadium is introduced in the BZT lattice there is a decrease in the grain size. Substitution of vanadium on B-site broads the dielectric permittivity curve. That can be caused by repulsion of vanadium with their next nearest neighbors leading to a structure which is tetragonally distorted.