文摘
Mn<sub>2sub>O<sub>3sub>–4TiO<sub>2sub> composite thin films were deposited on fluorine doped tin oxide (FTO) coated glass substrates from a solution of a newly synthesised hexanuclear single source molecular precursor [Mn<sub>2sub>Ti<sub>4sub>(TFA)<sub>8sub>(THF)<sub>6sub>(OH)<sub>4sub>(O)<sub>2sub>]·0.4THF <strong class="boldFont">1strong> (where TFA = trifluoroacetato and THF = tetrahydrofuran) by aerosol-assisted chemical vapour deposition (AACVD) technique. The precursor <strong class="boldFont">1strong> was characterised by melting point, elemental analysis, Fourier transform infra-red (FTIR) spectroscopy, proton nuclear magnetic resonance (<sup>1sup>H NMR) spectroscopy, thermogravimetry/derivative thermogravimetry (TG/DTG) and single crystal X-ray analysis. The chemical composition and surface morphology of the fabricated thin film which have been determined by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX), suggest the formation of impurity-free nanocrystalline mixtures of Mn<sub>2sub>O<sub>3sub>–4TiO<sub>2sub> composite with well-defined and evenly distributed particles in the size range of 112–308 nm. The indirect optical band gap energies of 1.20 and 2.81 eV were estimated by UV–Vis spectrophotometry. The current–voltage characterisation proved that the composite Mn<sub>2sub>O<sub>3sub>–4TiO<sub>2sub> electrodes exhibit n-type semiconducting behaviour. The maximum photocurrent density of 343 渭A/cm<sup>2sup> at 0.7 V versus Ag/AgCl/3 M KCl (∼1.23 V versus RHE) was obtained for the Mn<sub>2sub>O<sub>3sub>–4TiO<sub>2sub> photoelectrode deposited at 450 °C for 45 min from 0.006 M solution of <strong class="boldFont">1strong> in THF.