Mn<sub>2sub>O<sub>3sub>-4TiO<sub>2sub> semiconducting composite thin films for photo-electrochemical water splitting
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文摘
Mn<sub>2sub>O<sub>3sub>&ndash;4TiO<sub>2sub> composite thin films were deposited on fluorine doped tin oxide (FTO) coated glass substrates from a solution of a newly synthesised hexanuclear single source molecular precursor [Mn<sub>2sub>Ti<sub>4sub>(TFA)<sub>8sub>(THF)<sub>6sub>(OH)<sub>4sub>(O)<sub>2sub>]·0.4THF <strong class="boldFont">1strong> (where TFA = trifluoroacetato and THF = tetrahydrofuran) by aerosol-assisted chemical vapour deposition (AACVD) technique. The precursor <strong class="boldFont">1strong> was characterised by melting point, elemental analysis, Fourier transform infra-red (FTIR) spectroscopy, proton nuclear magnetic resonance (<sup>1sup>H NMR) spectroscopy, thermogravimetry/derivative thermogravimetry (TG/DTG) and single crystal X-ray analysis. The chemical composition and surface morphology of the fabricated thin film which have been determined by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX), suggest the formation of impurity-free nanocrystalline mixtures of Mn<sub>2sub>O<sub>3sub>&ndash;4TiO<sub>2sub> composite with well-defined and evenly distributed particles in the size range of 112&ndash;308 nm. The indirect optical band gap energies of 1.20 and 2.81 eV were estimated by UV&ndash;Vis spectrophotometry. The current&ndash;voltage characterisation proved that the composite Mn<sub>2sub>O<sub>3sub>&ndash;4TiO<sub>2sub> electrodes exhibit n-type semiconducting behaviour. The maximum photocurrent density of 343 渭A/cm<sup>2sup> at 0.7 V versus Ag/AgCl/3 M KCl (&sim;1.23 V versus RHE) was obtained for the Mn<sub>2sub>O<sub>3sub>&ndash;4TiO<sub>2sub> photoelectrode deposited at 450 &deg;C for 45 min from 0.006 M solution of <strong class="boldFont">1strong> in THF.

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