Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers
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- 作者：Zili Wua ; Xiong Zhanga ; xzhang62@aliyun.com" class="auth_mail" title="E-mail the corresponding author ; Tianhui Lianga ; Zhe Chuan Fengb ; Yiping Cuia
- 关键词：MOCVD ; p-AlInGaN ; Mg-delta-doping ; Mg-H complex ; Hole concentration
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：98
- 期：Complete
- 页码：181-186
- 全文大小：1335 K
文摘
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The Mg-delta-doped p-AlInGaN epi-layers were successfully grown.
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A hole concentration as high as 1.69 × 1017 cm−3 was achieved.
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The surface morphology was found to be dependent on the growth temperature.
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The Mg-H complex could be effectively dissociated by annealing process.