Chalcogenide solar cells fabricated by co-sputtering of quaternary CuIn0.75Ga0.25Se2 and In targets: Another promising sputtering route for mass production
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- 作者：Ke Cheng1 ; Yuqian Huang1 ; Jingjing Liu ; Ming Xue ; Zhongcheng Kuang ; Zhangbo Lu ; Sixin Wu ; Zuliang Du ; zld@henu.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Semiconductors ; Thin films ; Electronic properties ; X-ray diffraction ; Transmission electron microscopy
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：5 November 2016
- 年：2016
- 卷：684
- 期：Complete
- 页码：237-244
- 全文大小：2862 K
文摘
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CIGS absorber fabricated by c-sputtering of quaternary CuIn0.75Ga0.25Se2 and In targets.
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Indium was supplied to eliminate the stoichiometry deviation.
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The efficiency of up to 10.29% on 0.35 cm2 area has been achieved.
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Such new sputtering route shows great potential for practical applications.