Band structures in silicene on monolayer gallium phosphide substrate
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- 作者：Miaojuan Ren ; ss_renmj@163.com" class="auth_mail" title="E-mail the corresponding author ; Mingming Li ss_limm@ujn.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Changwen Zhang ss_zhangchw@163.com" class="auth_mail" title="E-mail the corresponding author ; Min Yuan ss_yuanm@ujn.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Ping Li ss_lip@ujn.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Feng Li ss_lif@ujn.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Weixiao Ji sps_jiwx@ujn.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xinlian Chen ss_chenxl@ujn.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：A. Silicene ; B. First-principles calculations ; D. Band structure
- 刊名：Solid State Communications
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：239
- 期：Complete
- 页码：32-36
- 全文大小：1125 K
文摘
- •
Si/GaP HBL opens a band gap.
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The band gap of silicene is sensitive to the stacking patterns.
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Tight-banding model analysis the gap origin.